Investigation of Optical, Structural, Morphological and Electrical Properties of Electrodeposited Cobalt Doped Copper Selenide (Cu_(1-x) Co_x Se) Thin Films

Undoped and cobalt doped copper selenide thin films have been successfully prepared unto fluorine tin oxide (FTO) substrates by electrodeposition method using acetate, nitrate selenium (IV) as precursors for copper, ions respectively. Deposited were subjected to optical, structural, morphological, compositional electrical analysis spectrophotometer, x-ray diffractometer, scanning electron microscope (SEM), energy dispersive spectroscopy (EDS) 4-point probe. Optical results observed between the wavelength range of 300 nm 1,000 showed that good optical responses. Absorbance values ranged 0.1 0.81 while transmittance lies 15.59 78.68 %. Energy band gap was found vary from 2.10 2.28 eV. These a dopant could be used modify properties films. Structural deposited are polycrystalline in nature with hexagonal structural phase. Crystallite sizes 27.56 34.27 obtained dislocation density lied . Microstrain Micrograph images flake-like particles increased size percentage increased. spectroscope confirmed incorporation on Electrical resistivity conductivity decreased result variation ion concentration. positioned them solar cell optoelectronics device applications.
 HIGHLIGHTS
 
 electrosynthesized eV
 Film thickness 48.41 176.79 nm. Thickness increase concentration increase
 Increase resulted shift diffraction peaks towards larger angles
 crystallite - increases
 SEM revealed flake like different sizes
 GRAPHICAL ABSTRACT